Vacancy effects on plasma-induced damage to n-type GaN

Vacancy effects on plasma-induced damage to n-type GaN

Physical Review B - Condensed Matter and Materials Physics

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Bibliographic Details
Main Authors:	Chua, S.J., Choi, H.W., Zhang, J., Li, P.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83254
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Institution:	National University of Singapore

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