$Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices$

Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

10.1109/TED.2007.907130

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Bibliographic Details
Main Authors:	Wang, X.P., Lim, A.E.-J., Yu, H.Y., Li, M.-F., Ren, C., Loh, W.-Y., Zhu, C.X., Chin, A., Trigg, A.D., Yeo, Y.-C., Biesemans, S., Lo, G.-Q., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	(HfxLa1-x) Ny (TaxAl1-x)Ny High-k gate dielectric Metal gate MOSFET Work function tuning
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83278
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83278
record_format	dspace
spelling	sg-nus-scholar.10635-832782024-11-14T02:34:53Z Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices Wang, X.P. Lim, A.E.-J. Yu, H.Y. Li, M.-F. Ren, C. Loh, W.-Y. Zhu, C.X. Chin, A. Trigg, A.D. Yeo, Y.-C. Biesemans, S. Lo, G.-Q. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING (HfxLa1-x) Ny (TaxAl1-x)Ny High-k gate dielectric Metal gate MOSFET Work function tuning 10.1109/TED.2007.907130 IEEE Transactions on Electron Devices 54 11 2871-2877 IETDA 2014-10-07T04:39:25Z 2014-10-07T04:39:25Z 2007-11 Article Wang, X.P., Lim, A.E.-J., Yu, H.Y., Li, M.-F., Ren, C., Loh, W.-Y., Zhu, C.X., Chin, A., Trigg, A.D., Yeo, Y.-C., Biesemans, S., Lo, G.-Q., Kwong, D.-L. (2007-11). Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices. IEEE Transactions on Electron Devices 54 (11) : 2871-2877. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.907130 00189383 http://scholarbank.nus.edu.sg/handle/10635/83278 000250590200009 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	(HfxLa1-x) Ny (TaxAl1-x)Ny High-k gate dielectric Metal gate MOSFET Work function tuning
spellingShingle	(HfxLa1-x) Ny (TaxAl1-x)Ny High-k gate dielectric Metal gate MOSFET Work function tuning Wang, X.P. Lim, A.E.-J. Yu, H.Y. Li, M.-F. Ren, C. Loh, W.-Y. Zhu, C.X. Chin, A. Trigg, A.D. Yeo, Y.-C. Biesemans, S. Lo, G.-Q. Kwong, D.-L. Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
description	10.1109/TED.2007.907130
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, X.P. Lim, A.E.-J. Yu, H.Y. Li, M.-F. Ren, C. Loh, W.-Y. Zhu, C.X. Chin, A. Trigg, A.D. Yeo, Y.-C. Biesemans, S. Lo, G.-Q. Kwong, D.-L.
format	Article
author	Wang, X.P. Lim, A.E.-J. Yu, H.Y. Li, M.-F. Ren, C. Loh, W.-Y. Zhu, C.X. Chin, A. Trigg, A.D. Yeo, Y.-C. Biesemans, S. Lo, G.-Q. Kwong, D.-L.
author_sort	Wang, X.P.
title	Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
title_short	Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
title_full	Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
title_fullStr	Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
title_full_unstemmed	Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
title_sort	work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced cmos devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83278
_version_	1821191646863163392

Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

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