Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

10.1109/TED.2007.907130

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Bibliographic Details
Main Authors: Wang, X.P., Lim, A.E.-J., Yu, H.Y., Li, M.-F., Ren, C., Loh, W.-Y., Zhu, C.X., Chin, A., Trigg, A.D., Yeo, Y.-C., Biesemans, S., Lo, G.-Q., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
(HfxLa1-x) Ny
(TaxAl1-x)Ny
High-k gate dielectric
Metal gate
MOSFET
Work function tuning
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83278
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Institution: National University of Singapore

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