A novel surface passivation process for HfO 2 Ge MOSFETs
10.1109/DRC.2004.1367762
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2014
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sg-nus-scholar.10635-834062015-01-11T22:45:43Z A novel surface passivation process for HfO 2 Ge MOSFETs Wu, N. Zhang, Q. Zhu, C. Chan, D.S.H. Li, M.F. Balasubramanian, N. Du, A.Y. Chin, A. Sin, J.K.O. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/DRC.2004.1367762 Device Research Conference - Conference Digest, DRC 19-20 2014-10-07T04:40:53Z 2014-10-07T04:40:53Z 2004 Conference Paper Wu, N.,Zhang, Q.,Zhu, C.,Chan, D.S.H.,Li, M.F.,Balasubramanian, N.,Du, A.Y.,Chin, A.,Sin, J.K.O.,Kwong, D.-L. (2004). A novel surface passivation process for HfO 2 Ge MOSFETs. Device Research Conference - Conference Digest, DRC : 19-20. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/DRC.2004.1367762" target="_blank">https://doi.org/10.1109/DRC.2004.1367762</a> 0780382846 15483770 http://scholarbank.nus.edu.sg/handle/10635/83406 NOT_IN_WOS Scopus |
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10.1109/DRC.2004.1367762 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Wu, N. Zhang, Q. Zhu, C. Chan, D.S.H. Li, M.F. Balasubramanian, N. Du, A.Y. Chin, A. Sin, J.K.O. Kwong, D.-L. |
format |
Conference or Workshop Item |
author |
Wu, N. Zhang, Q. Zhu, C. Chan, D.S.H. Li, M.F. Balasubramanian, N. Du, A.Y. Chin, A. Sin, J.K.O. Kwong, D.-L. |
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Wu, N. Zhang, Q. Zhu, C. Chan, D.S.H. Li, M.F. Balasubramanian, N. Du, A.Y. Chin, A. Sin, J.K.O. Kwong, D.-L. A novel surface passivation process for HfO 2 Ge MOSFETs |
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Wu, N. |
title |
A novel surface passivation process for HfO 2 Ge MOSFETs |
title_short |
A novel surface passivation process for HfO 2 Ge MOSFETs |
title_full |
A novel surface passivation process for HfO 2 Ge MOSFETs |
title_fullStr |
A novel surface passivation process for HfO 2 Ge MOSFETs |
title_full_unstemmed |
A novel surface passivation process for HfO 2 Ge MOSFETs |
title_sort |
novel surface passivation process for hfo 2 ge mosfets |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/83406 |
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1681089430003122176 |