A novel surface passivation process for HfO 2 Ge MOSFETs

• Main Authors: Wu, N., Zhang, Q., Zhu, C., Chan, D.S.H., Li, M.F., Balasubramanian, N., Du, A.Y., Chin, A., Sin, J.K.O., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83406
• Institution: National University of Singapore

10.1109/DRC.2004.1367762