A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement

A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement

10.1109/VTSA.2007.378931

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Lo, G.-Q., Choy, S.-F., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83426
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Institution: National University of Singapore
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Summary:10.1109/VTSA.2007.378931

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