A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement

• Main Authors: Toh, E.-H., Wang, G.H., Lo, G.-Q., Choy, S.-F., Chan, L., Samudra, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83426
• Institution: National University of Singapore

10.1109/VTSA.2007.378931