A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement

A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement

10.1109/VTSA.2007.378931

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Bibliographic Details
Main Authors:	Toh, E.-H., Wang, G.H., Lo, G.-Q., Choy, S.-F., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83426
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Institution:	National University of Singapore

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