A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement

10.1109/VTSA.2007.378931

Saved in:

Bibliographic Details
Main Authors:	Toh, E.-H., Wang, G.H., Lo, G.-Q., Choy, S.-F., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83426
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-83426
record_format	dspace
spelling	sg-nus-scholar.10635-834262015-01-07T22:16:44Z A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement Toh, E.-H. Wang, G.H. Lo, G.-Q. Choy, S.-F. Chan, L. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VTSA.2007.378931 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - 2014-10-07T04:41:06Z 2014-10-07T04:41:06Z 2007 Conference Paper Toh, E.-H.,Wang, G.H.,Lo, G.-Q.,Choy, S.-F.,Chan, L.,Samudra, G.,Yeo, Y.-C. (2007). A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VTSA.2007.378931" target="_blank">https://doi.org/10.1109/VTSA.2007.378931</a> 1424405858 http://scholarbank.nus.edu.sg/handle/10635/83426 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VTSA.2007.378931
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Toh, E.-H. Wang, G.H. Lo, G.-Q. Choy, S.-F. Chan, L. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Toh, E.-H. Wang, G.H. Lo, G.-Q. Choy, S.-F. Chan, L. Samudra, G. Yeo, Y.-C.
spellingShingle	Toh, E.-H. Wang, G.H. Lo, G.-Q. Choy, S.-F. Chan, L. Samudra, G. Yeo, Y.-C. A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement
author_sort	Toh, E.-H.
title	A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement
title_short	A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement
title_full	A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement
title_fullStr	A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement
title_full_unstemmed	A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement
title_sort	strained n-channel impact-ionization mos (i-mos) transistor with elevated silicon-carbon source/drain for performance enhancement
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83426
_version_	1681089433661603840

A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancement

Similar Items