Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Saved in:

Bibliographic Details
Main Authors:	Kang, J.F., Yu, H.Y., Ren, C., Wang, X.P., Li, M.-F., Chan, D.S.H., Liu, X.Y., Han, R.Q., Wang, Y.Y., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83536
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-83536
record_format	dspace
spelling	sg-nus-scholar.10635-835362024-11-12T21:59:33Z Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications Kang, J.F. Yu, H.Y. Ren, C. Wang, X.P. Li, M.-F. Chan, D.S.H. Liu, X.Y. Han, R.Q. Wang, Y.Y. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 393-398 2014-10-07T04:42:19Z 2014-10-07T04:42:19Z 2004 Conference Paper Kang, J.F.,Yu, H.Y.,Ren, C.,Wang, X.P.,Li, M.-F.,Chan, D.S.H.,Liu, X.Y.,Han, R.Q.,Wang, Y.Y.,Kwong, D.-L. (2004). Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 393-398. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/83536 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Kang, J.F. Yu, H.Y. Ren, C. Wang, X.P. Li, M.-F. Chan, D.S.H. Liu, X.Y. Han, R.Q. Wang, Y.Y. Kwong, D.-L.
format	Conference or Workshop Item
author	Kang, J.F. Yu, H.Y. Ren, C. Wang, X.P. Li, M.-F. Chan, D.S.H. Liu, X.Y. Han, R.Q. Wang, Y.Y. Kwong, D.-L.
spellingShingle	Kang, J.F. Yu, H.Y. Ren, C. Wang, X.P. Li, M.-F. Chan, D.S.H. Liu, X.Y. Han, R.Q. Wang, Y.Y. Kwong, D.-L. Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications
author_sort	Kang, J.F.
title	Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications
title_short	Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications
title_full	Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications
title_fullStr	Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications
title_full_unstemmed	Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications
title_sort	characteristics of sub-1 nm cvd hfo2 gate dielectrics with hfn electrodes for advanced cmos applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83536
_version_	1821222057958965248

Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications

Similar Items