Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications

• Main Authors: Kang, J.F., Yu, H.Y., Ren, C., Wang, X.P., Li, M.-F., Chan, D.S.H., Liu, X.Y., Han, R.Q., Wang, Y.Y., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83536
• Institution: National University of Singapore

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT