Demonstration of a new approach towards 0.25V Low-Vt CMOS using Ni-based FUSI

Digest of Technical Papers - Symposium on VLSI Technology

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Bibliographic Details
Main Authors: Yu, H.Y., Kittl, J.A., Lauwers, A., Singanamalla, R., Demeurisse, C., Kubicek, S., Augendre, E., Veloso, A., Brus, S., Vrancken, C., Hoffmann, T., Mertens, S., Onsia, B., Verbeeck, R., Demand, M., Rothchild, A., Froment, B., Van Dal, M., De Meyer, K., Li, M.F., Chen, J.D., Jurczak, M., Absil, P.P., Biesemans, S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83604
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Institution: National University of Singapore
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Summary:Digest of Technical Papers - Symposium on VLSI Technology