Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices

Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices

10.1149/1.2727393

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Bibliographic Details
Main Authors: Zang, H., Loh, W.Y., Oh, H.J., Choi, K.J., Nguyen, H.S., Lo, G.Q., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83827
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Institution: National University of Singapore
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Summary:10.1149/1.2727393

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