Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices
10.1149/1.2727393
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Main Authors: | Zang, H., Loh, W.Y., Oh, H.J., Choi, K.J., Nguyen, H.S., Lo, G.Q., Cho, B.J. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83827 |
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Institution: | National University of Singapore |
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