Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

• Main Authors: Zhu, S., Yu, H.Y., Chen, J.D., Whang, S.J., Chen, J.H., Shen, C., Zhu, C., Lee, S.J., Li, M.F., Chan, D.S.H., Yoo, W.J., Du, A., Tung, C.H., Singh, J., Chin, A., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83906
• Institution: National University of Singapore

10.1016/j.sse.2004.05.045