Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors
10.1109/IEDM.2011.6131681
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2014
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sg-nus-scholar.10635-840242015-02-17T03:57:29Z Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors Koh, S.-M. Zhou, Q. Thanigaivelan, T. Henry, T. Samudra, G.S. Yeo, Y.C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2011.6131681 Technical Digest - International Electron Devices Meeting, IEDM 35.7.1-35.7.4 TDIMD 2014-10-07T04:47:54Z 2014-10-07T04:47:54Z 2011 Conference Paper Koh, S.-M.,Zhou, Q.,Thanigaivelan, T.,Henry, T.,Samudra, G.S.,Yeo, Y.C. (2011). Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors. Technical Digest - International Electron Devices Meeting, IEDM : 35.7.1-35.7.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2011.6131681" target="_blank">https://doi.org/10.1109/IEDM.2011.6131681</a> 9781457705052 01631918 http://scholarbank.nus.edu.sg/handle/10635/84024 NOT_IN_WOS Scopus |
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National University of Singapore |
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Singapore |
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ScholarBank@NUS |
| description |
10.1109/IEDM.2011.6131681 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Koh, S.-M. Zhou, Q. Thanigaivelan, T. Henry, T. Samudra, G.S. Yeo, Y.C. |
| format |
Conference or Workshop Item |
| author |
Koh, S.-M. Zhou, Q. Thanigaivelan, T. Henry, T. Samudra, G.S. Yeo, Y.C. |
| spellingShingle |
Koh, S.-M. Zhou, Q. Thanigaivelan, T. Henry, T. Samudra, G.S. Yeo, Y.C. Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors |
| author_sort |
Koh, S.-M. |
| title |
Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors |
| title_short |
Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors |
| title_full |
Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors |
| title_fullStr |
Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors |
| title_full_unstemmed |
Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors |
| title_sort |
novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained n-mosfets with silicon-carbon stressors |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/84024 |
| _version_ |
1681089543205289984 |