Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors

• المؤلفون الرئيسيون: Koh, S.-M., Zhou, Q., Thanigaivelan, T., Henry, T., Samudra, G.S., Yeo, Y.C.
• مؤلفون آخرون: ELECTRICAL & COMPUTER ENGINEERING
• التنسيق: Conference or Workshop Item
• منشور في: 2014
• الوصول للمادة أونلاين: http://scholarbank.nus.edu.sg/handle/10635/84024
• المؤسسة: National University of Singapore

10.1109/IEDM.2011.6131681