Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors

Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors

10.1109/IEDM.2011.6131681

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Bibliographic Details
Main Authors: Koh, S.-M., Zhou, Q., Thanigaivelan, T., Henry, T., Samudra, G.S., Yeo, Y.C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84024
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/84024

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