Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs

Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs

10.1109/IEDM.2007.4418882

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Main Authors: Wang, G.H., Toh, E.-H., Wang, X., Seng, D.H.L., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.M., Balakumar, S., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84182
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-841822024-11-09T07:32:12Z Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs Wang, G.H. Toh, E.-H. Wang, X. Seng, D.H.L. Tripathy, S. Osipowicz, T. Chan, T.K. Hoe, K.M. Balakumar, S. Tung, C.H. Lo, G.-Q. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2007.4418882 Technical Digest - International Electron Devices Meeting, IEDM 131-134 TDIMD 2014-10-07T04:49:45Z 2014-10-07T04:49:45Z 2007 Conference Paper Wang, G.H., Toh, E.-H., Wang, X., Seng, D.H.L., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.M., Balakumar, S., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2007). Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs. Technical Digest - International Electron Devices Meeting, IEDM : 131-134. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418882 01631918 http://scholarbank.nus.edu.sg/handle/10635/84182 000259347800027 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/IEDM.2007.4418882
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Wang, G.H.
Toh, E.-H.
Wang, X.
Seng, D.H.L.
Tripathy, S.
Osipowicz, T.
Chan, T.K.
Hoe, K.M.
Balakumar, S.
Tung, C.H.
Lo, G.-Q.
Samudra, G.
Yeo, Y.-C.
format Conference or Workshop Item
author Wang, G.H.
Toh, E.-H.
Wang, X.
Seng, D.H.L.
Tripathy, S.
Osipowicz, T.
Chan, T.K.
Hoe, K.M.
Balakumar, S.
Tung, C.H.
Lo, G.-Q.
Samudra, G.
Yeo, Y.-C.
spellingShingle Wang, G.H.
Toh, E.-H.
Wang, X.
Seng, D.H.L.
Tripathy, S.
Osipowicz, T.
Chan, T.K.
Hoe, K.M.
Balakumar, S.
Tung, C.H.
Lo, G.-Q.
Samudra, G.
Yeo, Y.-C.
Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs
author_sort Wang, G.H.
title Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs
title_short Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs
title_full Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs
title_fullStr Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs
title_full_unstemmed Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs
title_sort silicon-germanium-tin (sigesn) source and drain stressors formed by sn implant and laser annealing for strained silicon-germanium channel p-mosfets
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/84182
_version_ 1821183196107112448

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