Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs

Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs

10.1109/IEDM.2007.4418882

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Bibliographic Details
Main Authors: Wang, G.H., Toh, E.-H., Wang, X., Seng, D.H.L., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.M., Balakumar, S., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84182
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84182

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