Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage

Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage

10.1149/1.3203958

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Bibliographic Details
Main Authors: Koh, S.-M., Zhou, W.J., Lee, R.T.P., Sinha, M., Ng, C.-M., Zhao, Z., Maynard, H., Variam, N., Erokhin, Y., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84183
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Institution: National University of Singapore
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Summary:10.1149/1.3203958

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