Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage

10.1149/1.3203958

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Bibliographic Details
Main Authors:	Koh, S.-M., Zhou, W.J., Lee, R.T.P., Sinha, M., Ng, C.-M., Zhao, Z., Maynard, H., Variam, N., Erokhin, Y., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84183
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84183
record_format	dspace
spelling	sg-nus-scholar.10635-841832024-11-11T07:45:49Z Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage Koh, S.-M. Zhou, W.J. Lee, R.T.P. Sinha, M. Ng, C.-M. Zhao, Z. Maynard, H. Variam, N. Erokhin, Y. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3203958 ECS Transactions 25 7 211-216 2014-10-07T04:49:45Z 2014-10-07T04:49:45Z 2009 Conference Paper Koh, S.-M., Zhou, W.J., Lee, R.T.P., Sinha, M., Ng, C.-M., Zhao, Z., Maynard, H., Variam, N., Erokhin, Y., Samudra, G., Yeo, Y.-C. (2009). Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage. ECS Transactions 25 (7) : 211-216. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3203958 9781566777445 19385862 http://scholarbank.nus.edu.sg/handle/10635/84183 000338102400019 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/1.3203958
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Koh, S.-M. Zhou, W.J. Lee, R.T.P. Sinha, M. Ng, C.-M. Zhao, Z. Maynard, H. Variam, N. Erokhin, Y. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Koh, S.-M. Zhou, W.J. Lee, R.T.P. Sinha, M. Ng, C.-M. Zhao, Z. Maynard, H. Variam, N. Erokhin, Y. Samudra, G. Yeo, Y.-C.
spellingShingle	Koh, S.-M. Zhou, W.J. Lee, R.T.P. Sinha, M. Ng, C.-M. Zhao, Z. Maynard, H. Variam, N. Erokhin, Y. Samudra, G. Yeo, Y.-C. Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
author_sort	Koh, S.-M.
title	Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
title_short	Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
title_full	Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
title_fullStr	Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
title_full_unstemmed	Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
title_sort	siliconr: carbon source/drain stressors: intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84183
_version_	1821184616969535488

Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage

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