Understanding of boron junction stability in preamorphized silicon after optimized flash annealing

Journal of the Electrochemical Society

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Bibliographic Details
Main Authors:	Yeong, S.H., Colombeau, B., Poon, C.H., Mok, K.R.C., See, A., Benistant, F., Tan, D.X.M., Pey, K.L., Ng, C.M., Chan, L., Srinivasan, M.P.
Other Authors:	CHEMICAL & BIOMOLECULAR ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/90451
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-90451
record_format	dspace
spelling	sg-nus-scholar.10635-904512023-09-05T09:59:08Z Understanding of boron junction stability in preamorphized silicon after optimized flash annealing Yeong, S.H. Colombeau, B. Poon, C.H. Mok, K.R.C. See, A. Benistant, F. Tan, D.X.M. Pey, K.L. Ng, C.M. Chan, L. Srinivasan, M.P. CHEMICAL & BIOMOLECULAR ENGINEERING Journal of the Electrochemical Society 155 7 H508-H512 JESOA 2014-10-09T07:05:25Z 2014-10-09T07:05:25Z 2008 Article Yeong, S.H., Colombeau, B., Poon, C.H., Mok, K.R.C., See, A., Benistant, F., Tan, D.X.M., Pey, K.L., Ng, C.M., Chan, L., Srinivasan, M.P. (2008). Understanding of boron junction stability in preamorphized silicon after optimized flash annealing. Journal of the Electrochemical Society 155 (7) : H508-H512. ScholarBank@NUS Repository. 00134651 http://scholarbank.nus.edu.sg/handle/10635/90451 000256198900060 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	Journal of the Electrochemical Society
author2	CHEMICAL & BIOMOLECULAR ENGINEERING
author_facet	CHEMICAL & BIOMOLECULAR ENGINEERING Yeong, S.H. Colombeau, B. Poon, C.H. Mok, K.R.C. See, A. Benistant, F. Tan, D.X.M. Pey, K.L. Ng, C.M. Chan, L. Srinivasan, M.P.
format	Article
author	Yeong, S.H. Colombeau, B. Poon, C.H. Mok, K.R.C. See, A. Benistant, F. Tan, D.X.M. Pey, K.L. Ng, C.M. Chan, L. Srinivasan, M.P.
spellingShingle	Yeong, S.H. Colombeau, B. Poon, C.H. Mok, K.R.C. See, A. Benistant, F. Tan, D.X.M. Pey, K.L. Ng, C.M. Chan, L. Srinivasan, M.P. Understanding of boron junction stability in preamorphized silicon after optimized flash annealing
author_sort	Yeong, S.H.
title	Understanding of boron junction stability in preamorphized silicon after optimized flash annealing
title_short	Understanding of boron junction stability in preamorphized silicon after optimized flash annealing
title_full	Understanding of boron junction stability in preamorphized silicon after optimized flash annealing
title_fullStr	Understanding of boron junction stability in preamorphized silicon after optimized flash annealing
title_full_unstemmed	Understanding of boron junction stability in preamorphized silicon after optimized flash annealing
title_sort	understanding of boron junction stability in preamorphized silicon after optimized flash annealing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/90451
_version_	1776259162782564352

Understanding of boron junction stability in preamorphized silicon after optimized flash annealing

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