Understanding of boron junction stability in preamorphized silicon after optimized flash annealing

Understanding of boron junction stability in preamorphized silicon after optimized flash annealing

Journal of the Electrochemical Society

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Bibliographic Details
Main Authors: Yeong, S.H., Colombeau, B., Poon, C.H., Mok, K.R.C., See, A., Benistant, F., Tan, D.X.M., Pey, K.L., Ng, C.M., Chan, L., Srinivasan, M.P.
Other Authors: CHEMICAL & BIOMOLECULAR ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/90451
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Institution: National University of Singapore

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