Comparison of SAM-based junctions with Ga 2O 3/EGaIn top electrodes to other large-area tunneling junctions
10.1021/jp303072a
Saved in:
Main Authors: | Nijhuis, C.A., Reus, W.F., Barber, J.R., Whitesides, G.M. |
---|---|
Other Authors: | CHEMISTRY |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/93338 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Defect scaling with contact area in EGaIn-based junctions: Impact on quality, Joule heating, and apparent injection current
by: Jiang Le, et al.
Published: (2016) -
The SAM, not the electrodes, dominates charge transport in metal-monolayer//Ga 2O 3/gallium-indium eutectic junctions
by: Reus, W.F., et al.
Published: (2014) -
Mechanism of rectification in tunneling junctions based on molecules with asymmetric potential drops
by: Nijhuis, C.A., et al.
Published: (2014) -
Interplay between interfacial energy, contact mechanics, and capillary forces in EGaIn droplets
by: Amini, Shahrouz, et al.
Published: (2022) -
Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance
by: Sangeeth, C.S.S., et al.
Published: (2021)