Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

10.1016/S0921-5107(00)00504-3

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Bibliographic Details
Main Authors: Lee, Y.K., Latt, K.M., JaeHyung, K., Osipowicz, T., Sher-Yi, C., Lee, K.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96028
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Institution: National University of Singapore
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Summary:10.1016/S0921-5107(00)00504-3

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