Growth and band alignment of epitaxial Ni metal gate on crystalline LaAlO3 (001) dielectric film
10.1063/1.3153507
Saved in:
Main Authors: | Mi, Y.Y., Wang, S.J., Zegenhagen, J., Chai, J.W., Pan, J.S., Huan, C.H.A., Feng, Y.P., Ong, C.K. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/96751 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Energy-band alignments at LaAlO3 and Ge interfaces
by: Mi, Y.Y., et al.
Published: (2014) -
Ab initio studies on Schottky barrier heights at metal gate/LaAlO 3 (001) interfaces
by: Dong, Y.F., et al.
Published: (2014) -
Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe
by: Mi, Y.Y., et al.
Published: (2014) -
Band alignment and thermal stability of HfO2 gate dielectric on SiC
by: Chen, Q., et al.
Published: (2014) -
Chemical tuning of band alignments for metal gate/high- κ oxide interfaces
by: Dong, Y.F., et al.
Published: (2014)