Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing

• Main Authors: Latt, K.M., Lee, Y.K., Osipowicz, T., Park, H.S.
• 其他作者: PHYSICS
• 格式: Article
• 出版: 2014
• 主題: Diffusion barrier; Interfacial reaction; Metallization; Phase transformation; Tantalum (Ta)
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/96965

10.1016/S0921-5107(02)00093-4