Reduced contact resistance and improved surface morphology of ohmic contacts on gan employing krf laser irradiation
10.1143/JJAP.50.04DF06
Saved in:
Main Authors: | Wang, G.H., Wong, T.-C., Wang, X.-C., Zheng, H.-Y., Chan, T.-K., Osipowicz, T., Foo, Y.-L., Tripathy, S. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/97779 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Non-gold ohmic contact for GaN-on-Si HEMT
by: Zhuang, Yihao
Published: (2023) -
Effects of plasma surface treatment on ohmic contact to n-GaN
by: Chor, E.F., et al.
Published: (2014) -
Surface Modification and Ohmic Contact Formation to n and p-Type GaN
by: Choi, H.W., et al.
Published: (2014) -
AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
by: Wang, H.T., et al.
Published: (2014) -
Regrown ohmic contact to GaN-based high electron mobility transistors
by: Tan, Eleen
Published: (2023)