The dependence of device dark current on the active-layer morphology of solution-processed organic photodetectors
10.1002/adfm.201000967
Saved in:
Main Authors: | Keivanidis, P.E., Ho, P.K.H., Friend, R.H., Greenham, N.C. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/98252 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Low-dark-current TiO2 MSM UV photodetectors with Pt schottky contacts
by: Huang, H., et al.
Published: (2014) -
Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier
by: Zang, H., et al.
Published: (2014) -
Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors
by: Tian, Y., et al.
Published: (2014) -
Synthesis, characterization of bay-substituted perylene diimide based D-A-D type small molecules and their applications as a non-fullerene electron acceptor in polymer solar cells
by: Ganesamoorthy, Ramasamy, et al.
Published: (2018) -
Concentration effects on emission of bay-substituted perylene diimide derivatives in a polymer matrix
by: Miasojedovas, A., et al.
Published: (2014)