Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions

Poly(methyl methacrylate) is a common polymer used as a lithographic resist for all forms of particle (photon, ion and electron) beam writing. Faithful lithographic reproduction requires that the exposure dose, Θ, lies in the window Θ0 ≤ Θ < Θ×0, where Θ0 and Θ×0 represent the clearing and cr...

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Main Authors: Puttaraksa N., Norarat R., Laitinen M., Sajavaara T., Singkarat S., Whitlow H.J.
Format: Article
Language:English
Published: 2014
Online Access:http://www.scopus.com/inward/record.url?eid=2-s2.0-79951960125&partnerID=40&md5=28b6b6135971046c81edcd3cd26d35fd
http://cmuir.cmu.ac.th/handle/6653943832/6856
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Institution: Chiang Mai University
Language: English
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spelling th-cmuir.6653943832-68562014-08-30T03:51:19Z Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions Puttaraksa N. Norarat R. Laitinen M. Sajavaara T. Singkarat S. Whitlow H.J. Poly(methyl methacrylate) is a common polymer used as a lithographic resist for all forms of particle (photon, ion and electron) beam writing. Faithful lithographic reproduction requires that the exposure dose, Θ, lies in the window Θ0 ≤ Θ < Θ×0, where Θ0 and Θ×0 represent the clearing and cross-linking onset doses, respectively. In this work we have used the programmable proximity aperture ion beam lithography systems in Chiang Mai and Jyväskylä to determine the exposure characteristics in terms of fluence for 2 MeV protons, 3 MeV 4 He2 + and 6 MeV 12 C3 + ions, respectively. After exposure the samples were developed in 7:3 by volume propan-2-ol:de-ionised water mixture. At low fluences, where the fluence is below the clearing fluence, the exposed regions were characterised by rough regions, particularly for He with holes around the ion tracks. As the fluence (dose) increases so that the dose exceeds the clearing dose, the PMMA is uniformly removed with sharp vertical walls. When Θ exceeds the cross-linking onset fluence, the bottom of the exposed regions show undissolved PMMA. © 2011 Elsevier B.V. All rights reserved. 2014-08-30T03:51:19Z 2014-08-30T03:51:19Z Article in Press 0168583X 10.1016/j.nimb.2011.01.056 NIMBE http://www.scopus.com/inward/record.url?eid=2-s2.0-79951960125&partnerID=40&md5=28b6b6135971046c81edcd3cd26d35fd http://cmuir.cmu.ac.th/handle/6653943832/6856 English
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
language English
description Poly(methyl methacrylate) is a common polymer used as a lithographic resist for all forms of particle (photon, ion and electron) beam writing. Faithful lithographic reproduction requires that the exposure dose, Θ, lies in the window Θ0 ≤ Θ < Θ×0, where Θ0 and Θ×0 represent the clearing and cross-linking onset doses, respectively. In this work we have used the programmable proximity aperture ion beam lithography systems in Chiang Mai and Jyväskylä to determine the exposure characteristics in terms of fluence for 2 MeV protons, 3 MeV 4 He2 + and 6 MeV 12 C3 + ions, respectively. After exposure the samples were developed in 7:3 by volume propan-2-ol:de-ionised water mixture. At low fluences, where the fluence is below the clearing fluence, the exposed regions were characterised by rough regions, particularly for He with holes around the ion tracks. As the fluence (dose) increases so that the dose exceeds the clearing dose, the PMMA is uniformly removed with sharp vertical walls. When Θ exceeds the cross-linking onset fluence, the bottom of the exposed regions show undissolved PMMA. © 2011 Elsevier B.V. All rights reserved.
format Article
author Puttaraksa N.
Norarat R.
Laitinen M.
Sajavaara T.
Singkarat S.
Whitlow H.J.
spellingShingle Puttaraksa N.
Norarat R.
Laitinen M.
Sajavaara T.
Singkarat S.
Whitlow H.J.
Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
author_facet Puttaraksa N.
Norarat R.
Laitinen M.
Sajavaara T.
Singkarat S.
Whitlow H.J.
author_sort Puttaraksa N.
title Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
title_short Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
title_full Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
title_fullStr Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
title_full_unstemmed Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
title_sort lithography exposure characteristics of poly(methyl methacrylate) (pmma) for carbon, helium and hydrogen ions
publishDate 2014
url http://www.scopus.com/inward/record.url?eid=2-s2.0-79951960125&partnerID=40&md5=28b6b6135971046c81edcd3cd26d35fd
http://cmuir.cmu.ac.th/handle/6653943832/6856
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