Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions

• Main Authors: Puttaraksa N., Norarat R., Laitinen M., Sajavaara T., Singkarat S., Whitlow H.J.
• Format: Article
• Language: English
• Published: 2014
• Online Access: http://www.scopus.com/inward/record.url?eid=2-s2.0-79951960125&partnerID=40&md5=28b6b6135971046c81edcd3cd26d35fd; http://cmuir.cmu.ac.th/handle/6653943832/6856
• Institution: Chiang Mai University

Poly(methyl methacrylate) is a common polymer used as a lithographic resist for all forms of particle (photon, ion and electron) beam writing. Faithful lithographic reproduction requires that the exposure dose, Θ, lies in the window Θ0 ≤ Θ < Θ×0, where Θ0 and Θ×0 represent the clearing and cr...