Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology

by Yang, R., Loh, W.Y., Yu, M.B., Xiong, Y-.Z., Choy, S.F., Jiang, Y., Chan, D.S.H., Lim, Y.F., Bera, L.K., Wong, L.Y., Li, W.H., Du, A.Y., Tung, C.H., Hoe, K.M., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Published 2014

Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealing

by Lee, R.T.-P., Koh, A.T.-Y., Liu, F.-Y., Fang, W.-W., Liow, T.-Y., Tan, K.-M., Lim, P.-C., Lim, A.E.-J., Zhu, M., Hoe, K.-M., Tung, C.-H., Lo, G.-Q., Wang, X., Low, D.K.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Chip-based measurement-device-independent quantum key distribution using integrated silicon photonic systems

by Cao, Lin, Luo, W., Wang, Yunxiang, Zou, J., Yan, R. D., Cai, H., Zhang, Yichen, Hu, X. L., Jiang, C., Fan, W. J., Zhou, X. Q., Dong, B., Luo, X. S., Lo, G. Q., Wang, Y. X., Xu, Z. W., Sun, S. H., Wang, X. B., Hao, Y. L., Jin, Y. F., Kwong, D. L., Kwek, Leongchuan, Liu, Aiqun
Published 2020