Characterization of gate charging N-channel mosfet to determine the effects of different gate bias voltages and temperature conditions
Usual applications of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) such as in the field of battery operated systems; drivers and solid state relays require a stable threshold voltage. A MOSFET with varying threshold voltage can cause degradation of the output signal or complete malfunc...
Saved in:
Main Author: | Garcia, Rommel Galang |
---|---|
Format: | text |
Language: | English |
Published: |
Animo Repository
2008
|
Subjects: | |
Online Access: | https://animorepository.dlsu.edu.ph/etd_masteral/3726 https://animorepository.dlsu.edu.ph/context/etd_masteral/article/10564/viewcontent/CDTG004470_P.pdf |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | De La Salle University |
Language: | English |
Similar Items
-
The gate leakage current in graphene field-effect transistor
by: Mao, L.-F., et al.
Published: (2014) -
The gate leakage current in graphene field-effect transistor
by: Mao, L.-F., et al.
Published: (2014) -
Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator
by: Rao, R.V.V.V.J., et al.
Published: (2014) -
Analysis and design of a 3-stage CMOS current controlled ring oscillator
by: Prapto Nugroho
Published: (2008) -
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
by: Wang, L., et al.
Published: (2014)