Terahertz emission enhancement in InAs thin films using silicon lens coupler
Enhancement of the pulsed terahertz radiation generated from a lens-coupled InAs thin film excited by a femtosecond laser is reported. A Si hemispherical lens was used as a lens coupler and attached to the substrate-side of a 520-nm-thick InAs film, grown on a Si substrate. An enhancement factor of...
Saved in:
Main Authors: | Que, Christopher T., Edamura, Tadataka, Nakajima, Makoto, Tani, Masahiko, Hangyo, Masanori |
---|---|
格式: | text |
出版: |
Animo Repository
2011
|
主題: | |
在線閱讀: | https://animorepository.dlsu.edu.ph/faculty_research/11911 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
機構: | De La Salle University |
相似書籍
-
Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses
由: Que, Christopher T., et al.
出版: (2009) -
Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation
由: Estacio, E., et al.
出版: (2011) -
Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation
由: Sadia, Cyril P, et al.
出版: (2018) -
Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation
由: Sadia, Cyril P., et al.
出版: (2018) -
A structure for enhanced terahertz emission from a photoexcited semiconductor surface
由: Bakunov, M. I., et al.
出版: (2010)