Effects of electrode material and configuration on the characteristics of planar resistive switching devices

• Main Authors: Cha, Dongkyu, David, A., Li, K., Wu, T., Peng, H. Y., Pu, L., Wu, J. C., Hong, J. H., Lin, W. N., Li, Y. Y., Ding, J. F.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/101706; http://hdl.handle.net/10220/19732
• Institution: Nanyang Technological University

We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work...