Electrical characteristics of three-dimensional metal-insulator-metal (3-D MIM) capacitor embedded in partially-filled Through-Silicon Via (TSV)
In this work, a new design of 3-D MIM capacitor embedded in partially-filled TSV is proposed and evaluated. The electrical characteristics of 3-D MIM capacitors confirm that the new design effectively mitigates the process-induced thermo-mechanical stress between TSV Cu core and the surrounding str...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/144088 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In this work, a new design of 3-D MIM capacitor embedded in partially-filled TSV is proposed and evaluated. The electrical characteristics of 3-D MIM capacitors confirm
that the new design effectively mitigates the process-induced thermo-mechanical stress between TSV Cu core and the surrounding structures. The leakage current at a bias of 3 V is reduced from 1.85 mA for a fully-filled (=30μm), test vehicle to
13.58 pA for a partially-filled test vehicle (=40μm), which is comparable to the leakage current of 4.61 pA for a planar MIM capacitor. An ultra-high capacitance of 6,449.0 nF/μm2 is also achieved for the 3-D MIM capacitor embedded in the partially
filled 40 μm TSV. |
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