Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate

• Main Authors: Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Substrates; Surface Treatment
• Online Access: https://hdl.handle.net/10356/145344
• Institution: Nanyang Technological University

Germanium-tin (GeSn) p-channel fin field-effect transistor (p-FinFET) was realized on a novel GeSn-on-insulator (GeSnOI) substrate. The high-quality GeSnOI substrate was formed using direct wafer bonding technique and was layer-transferred from a 300-mm GeSn/Ge/Si donor wafer. Material quality was e...