Grating and hole-array enhanced germanium lateral p-i-n photodetectors on an insulator platform

Grating and hole-array enhanced germanium lateral p-i-n photodetectors on an insulator platform

Germanium (Ge) lateral p-i-n photodetectors with grating and hole-array structures were fabricated on a Ge-on-insulator (GOI) platform. Owing to the low threading dislocation density (TDD) in the transferred Ge layer, a low dark current of 0.279 μA was achieved at -1 V. The grating structure enha...

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書目詳細資料
Main Authors:	Zhou, Hao, Chen, Qimiao, Wu, Shaoteng, Zhang, Lin, Guo, Xin, Son, Bongkwon, Tan, Chuan Seng
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2022
主題:	Engineering::Electrical and electronic engineering::Semiconductors Germanium Photodetector
在線閱讀:	https://hdl.handle.net/10356/155045
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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