Realistic modeling of electromigration in today’s ULSI interconnections

• المؤلف الرئيسي: Li, Wei
• مؤلفون آخرون: Tan Cher Ming
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/18900
• المؤسسة: Nanyang Technological University

IC architecture makes extensively use of multiple interconnect levels with many vias that enable electrical current to flow between each level. A common failure mechanism in interconnections is the formation and the growth of voids and/or hillocks which may span across the line width and sever (or s...