Fabrication and characterisation of microelectronics devices, circuits and system II

Fabrication and characterisation of microelectronics devices, circuits and system II

The quantum well intermixing (QWI) technique using pulsed-photoabsorption-induced disordering (P-PAID) in the InGaAs/InGaAsP material system has been investigated.

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書目詳細資料
主要作者:	Zhang, Dao Hua
其他作者:	School of Electrical and Electronic Engineering
格式:	Research Report
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	http://hdl.handle.net/10356/2866
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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