Design of 1.55 um InGaAsNBi/GaAs quantum well laser

Design of 1.55 um InGaAsNBi/GaAs quantum well laser

The use of InGaAs/GaAs quantum well (QW) lasers has started to become prevalent in fiber communications. It is found that by operating at 1.55um minimal optical loss can be achieved. Bismide has been added so as to achieve the ideal 1.55um wavelength for the QW laser. Simulations with varying bismid...

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書目詳細資料
主要作者:	Kwan, Zi Jian
其他作者:	Fan Weijun
格式:	Final Year Project
語言:	English
出版:	2017
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	http://hdl.handle.net/10356/70856
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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