Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
Sulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carri...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2014
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/79893 http://hdl.handle.net/10220/20134 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 總結: | Sulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carrier depths are obtained for the shallow n-In0.53Ga0.47As films. Our results indicate that sub-10 nm sulfur-doped layers with active carrier concentration as high as 1.7 × 1019 cm−3 were achieved. Sheet resistances estimated from infrared spectroscopic ellipsometry are in good agreement with those obtained by electrical methods. |
|---|