Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

Sulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carri...

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Main Authors: Richard D'Costa, Vijay, Subramanian, Sujith, Li, Daosheng, Wicaksono, Satrio, Yoon, Soon Fatt, Tok, Eng Soon, Yeo, Yee-Chia
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/79893
http://hdl.handle.net/10220/20134
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-798932020-03-07T13:57:21Z Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions Richard D'Costa, Vijay Subramanian, Sujith Li, Daosheng Wicaksono, Satrio Yoon, Soon Fatt Tok, Eng Soon Yeo, Yee-Chia School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Sulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carrier depths are obtained for the shallow n-In0.53Ga0.47As films. Our results indicate that sub-10 nm sulfur-doped layers with active carrier concentration as high as 1.7 × 1019 cm−3 were achieved. Sheet resistances estimated from infrared spectroscopic ellipsometry are in good agreement with those obtained by electrical methods. Published version 2014-07-07T05:45:49Z 2019-12-06T13:36:13Z 2014-07-07T05:45:49Z 2019-12-06T13:36:13Z 2014 2014 Journal Article Richard D'Costa, V., Subramanian, S., Li, D., Wicaksono, S., Yoon, S. F., Tok, E. S., et al. (2014). Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions. Applied Physics Letters, 104(23), 232102-. 0003-6951 https://hdl.handle.net/10356/79893 http://hdl.handle.net/10220/20134 10.1063/1.4882917 en Applied Physics Letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4882917.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Richard D'Costa, Vijay
Subramanian, Sujith
Li, Daosheng
Wicaksono, Satrio
Yoon, Soon Fatt
Tok, Eng Soon
Yeo, Yee-Chia
Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
description Sulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carrier depths are obtained for the shallow n-In0.53Ga0.47As films. Our results indicate that sub-10 nm sulfur-doped layers with active carrier concentration as high as 1.7 × 1019 cm−3 were achieved. Sheet resistances estimated from infrared spectroscopic ellipsometry are in good agreement with those obtained by electrical methods.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Richard D'Costa, Vijay
Subramanian, Sujith
Li, Daosheng
Wicaksono, Satrio
Yoon, Soon Fatt
Tok, Eng Soon
Yeo, Yee-Chia
format Article
author Richard D'Costa, Vijay
Subramanian, Sujith
Li, Daosheng
Wicaksono, Satrio
Yoon, Soon Fatt
Tok, Eng Soon
Yeo, Yee-Chia
author_sort Richard D'Costa, Vijay
title Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
title_short Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
title_full Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
title_fullStr Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
title_full_unstemmed Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
title_sort infrared spectroscopic ellipsometry study of sulfur-doped in0.53ga0.47as ultra-shallow junctions
publishDate 2014
url https://hdl.handle.net/10356/79893
http://hdl.handle.net/10220/20134
_version_ 1681049504730578944

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