Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
Sulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carri...
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| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/79893 http://hdl.handle.net/10220/20134 |
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| Institution: | Nanyang Technological University |
| Language: | English |