Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

Sulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carri...

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書目詳細資料
Main Authors:	Richard D'Costa, Vijay, Subramanian, Sujith, Li, Daosheng, Wicaksono, Satrio, Yoon, Soon Fatt, Tok, Eng Soon, Yeo, Yee-Chia
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2014
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/79893 http://hdl.handle.net/10220/20134
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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