Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

• المؤلفون الرئيسيون: Richard D'Costa, Vijay, Subramanian, Sujith, Li, Daosheng, Wicaksono, Satrio, Yoon, Soon Fatt, Tok, Eng Soon, Yeo, Yee-Chia
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/79893; http://hdl.handle.net/10220/20134
• المؤسسة: Nanyang Technological University

Sulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carri...