Electrical properties of InSbN alloys fabricated by two-step ion implantation

• Main Authors: Wang, Youyi, Zhang, Dao Hua, Jin, Y. J., Chen, X. Z., Li, J. H.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/97460; http://hdl.handle.net/10220/10709
• Institution: Nanyang Technological University

We report the electrical properties of the InSbN alloys fabricated by two-step implantation of nitrogen ions into InSb wafers, characterized by Hall measurements. The alloy with higher implanted dose shows lower electron concentration due to the acceptor nature of nitrogen. At temperatures below 150...