A new breakdown failure mechanism in HfO 2 gate dielectric

• Main Authors: Ranjan, R., Pey, K.L., Tang, L.J., Tung, C.H., Groeseneken, G., Radhakrishnan, M.K., Kaczer, B., Degraeve, R., De Gendt, S.
• 其他作者: INSTITUTE OF MICROELECTRONICS
• 格式: Conference or Workshop Item
• 出版: 2014
• 主題: Breakdown; Dielectric-breakdown- induced epitaxy; HfO 2; High-k gate dielectrics
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/115364

Annual Proceedings - Reliability Physics (Symposium)