Geometry dependence of gate oxide breakdown evolution

Geometry dependence of gate oxide breakdown evolution

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Sun, Y., Pey, K.L., Tung, C.H., Lombardo, S., Palumbo, F., Tang, L.J., Radhakrishnan, M.K.
Other Authors: INSTITUTE OF MICROELECTRONICS
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/115432
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Institution: National University of Singapore
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Summary:Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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