Geometry dependence of gate oxide breakdown evolution
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Saved in:
Main Authors: | Sun, Y., Pey, K.L., Tung, C.H., Lombardo, S., Palumbo, F., Tang, L.J., Radhakrishnan, M.K. |
---|---|
Other Authors: | INSTITUTE OF MICROELECTRONICS |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/115432 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxides
by: Palumbo, F., et al.
Published: (2014) -
Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopy
by: Pey, K.L., et al.
Published: (2014) -
Physical analysis of Ti-migration in 33 Å gate oxide breakdown
by: Pey, K.L., et al.
Published: (2014) -
Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETs
by: Tang, L.J., et al.
Published: (2014) -
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM
by: Pey, K.L., et al.
Published: (2014)